Semiconductor device microstructure
US4696188A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 6, 1985 |
| Grant date | Sep 29, 1987 |
| Priority date | — |
| Expiry date | Sep 6, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N19/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises member means comprising first and second thermal-to-electric transducer or static electric element, the member means having a predetermined configuration suspended over the depression. The member means is connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the elements and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the transducer or element and the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.