Method of forming silicon nitride film and product
US4699825A · kind A · utility
17Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1985 |
| Grant date | Oct 13, 1987 |
| Priority date | — |
| Expiry date | Nov 14, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/266
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In forming a silicon nitride film by the low-pressure CVD method using a silane gas and ammonia, the reaction pressure is set to lie over a range of from about 0.05 to about 0.25 Torr, enabling a silicon nitride film to be formed, of uniform thickness, highly efficiently even on large wafers, and maintaining high yield, improved uniformity and good quality as a whole without decreasing the film-forming efficiency. Preferably, the reaction pressure is maintained over a range of from 0.1 to 0.2 Torr to further increase the efficiency, while preferably maintaining the temperature over a range of from 700.degree. to 1000.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.