Takeo Yoshimi
2Patents
2h-index
10Co-inventors
37Inventor score
Filing activity: May 19, 1981 → Nov 14, 1985
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4365264A | Semiconductor device with high density low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub.z passivating layer | Electricity | 62 | Expired |
| US4699825A | Method of forming silicon nitride film and product | Emerging Cross-Sectional Technologies | 17 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.