Photosensitive resin composition and process for forming photo-resist pattern using the same
US4702990A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 1985 |
| Grant date | Oct 27, 1987 |
| Priority date | — |
| Expiry date | May 10, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a photosensitive resin composition used to form a top resist layer of a multilayer resist system, the composition comprising a photosensitive polyphenylsilsesquioxane represented by the following general formula (I) of: ##STR1## wherein X is selected from the group consisting of acryloyloxymethyl, methacryloyloxymethyl, and cinnamoyloxymethyl; and l, m and n are zero or positive integers but l and m do not take the value of zero simultaneously; and a bisazide compound added to act as a cross-linking agent. The photosensitive resin composition has high sensitivity to UV light and excellent resistance to reactive ion etching under oxygen gas (O.sub.2 RIE).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.