Simultaneous plasma sculpturing and dual tapered aperture etch
US4705596A · kind A · utility
7Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1985 |
| Grant date | Nov 10, 1987 |
| Priority date | — |
| Expiry date | Apr 15, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of planarizing a semiconductor layer by use of a plasma etch step which also etches vias having a tapered profile is made possible by selecting a conformal layer preferably of a different material than the material through which the via is to be provided such that a plasma etch will establish differing etch rates in the conformal and underlying layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.