Inventor · Austin, TX, US

Frederick N. Hause

110Patents
26h-index
42Co-inventors
86Inventor score

Filing activity: Aug 22, 1984 → May 1, 2002

Most-cited inventions

PatentTitleAreaCited byStatus
US6111260A Method and apparatus for in situ anneal during ion implant Electricity 279 Expired
US6274894A Low-bandgap source and drain formation for short-channel MOS transistors Electricity 114 Expired
US5918129A Method of channel doping using diffusion from implanted polysilicon Electricity 105 Expired
US6060345A Method of making NMOS and PMOS devices with reduced masking steps Electricity 104 Expired
US5885877A Composite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectric Electricity 69 Expired
US5930642A Transistor with buried insulative layer beneath the channel region Electricity 68 Expired
US5899732A Method of implanting silicon through a polysilicon gate for punchthrough control of a semiconductor device Electricity 67 Expired
US5888880A Trench transistor with localized source/drain regions implanted through selectively grown oxide layer Electricity 63 Expired
US5710054A Method of forming a shallow junction by diffusion from a silicon-based spacer Electricity 59 Expired
US6225151A Nitrogen liner beneath transistor source/drain regions to retard dopant diffusion Electricity 51 Expired
US6255703A Device with lower LDD resistance Electricity 47 Expired
US6226781A Modifying a design layer of an integrated circuit using overlying and underlying design layers Electricity 45 Expired
US5933721A Method for fabricating differential threshold voltage transistor pair Electricity 44 Expired
US5888675A Reticle that compensates for radiation-induced lens error in a photolithographic system Physics 43 Expired
US6268637A Method of making air gap isolation by making a lateral EPI bridge for low K isolation advanced CMOS fabrication Electricity 42 Expired
US6084280A Transistor having a metal silicide self-aligned to the gate Electricity 42 Expired
US6259142A Multiple split gate semiconductor device and fabrication method Electricity 41 Expired
US5840451A Individually controllable radiation sources for providing an image pattern in a photolithographic system Emerging Cross-Sectional Technologies 39 Expired
US6410967B1 Transistor having enhanced metal silicide and a self-aligned gate electrode Electricity 39 Expired
US6069398A Thin film resistor and fabrication method thereof Electricity 37 Expired
US6080629A Ion implantation into a gate electrode layer using an implant profile displacement layer Electricity 34 Expired
US5933717A Vertical transistor interconnect structure and fabrication method thereof Electricity 31 Expired
US5512506A Lightly doped drain profile optimization with high energy implants Electricity 30 Expired
US5930634A Method of making an IGFET with a multilevel gate Electricity 29 Expired
US5801075A Method of forming trench transistor with metal spacers Electricity 29 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.