Monolithic semiconductor integrated circuit ferroelectric memory device, and methods of fabricating and utilizing same
US4707897A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1980 |
| Grant date | Nov 24, 1987 |
| Priority date | — |
| Expiry date | Mar 24, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferrelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 5,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.