Ramtron Corporation
25Patents
0Active
25Granted
35Portfolio score
Filing activity: Mar 24, 1980 → Dec 12, 1991
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4873664A | Self restoring ferroelectric memory | Physics | 239 | Expired |
| US4809225A | Memory cell with volatile and non-volatile portions having ferroelectric capacitors | Physics | 221 | Expired |
| US4888733A | Non-volatile memory cell and sensing method | Physics | 173 | Expired |
| US4853893A | Data storage device and method of using a ferroelectric capacitance divider | Physics | 166 | Expired |
| US5005102A | Multilayer electrodes for integrated circuit capacitors | Emerging Cross-Sectional Technologies | 151 | Expired |
| US4800543A | Timepiece communication system | Physics | 113 | Expired |
| US5206788A | Series ferroelectric capacitor structure for monolithic integrated circuits and method | Emerging Cross-Sectional Technologies | 88 | Expired |
| US5142437A | Conducting electrode layers for ferroelectric capacitors in integrated circuits and method | Emerging Cross-Sectional Technologies | 66 | Expired |
| US4893272A | Ferroelectric retention method | Physics | 60 | Expired |
| US4914627A | One transistor memory cell with programmable capacitance divider | Physics | 56 | Expired |
| US4707897A | Monolithic semiconductor integrated circuit ferroelectric memory device, and methods of fabricating and utilizing same | Emerging Cross-Sectional Technologies | 39 | Expired |
| US5043790A | Sealed self aligned contacts using two nitrides process | Emerging Cross-Sectional Technologies | 39 | Expired |
| US4918654A | SRAM with programmable capacitance divider | Physics | 38 | Expired |
| US4910708A | Dram with programmable capacitance divider | Physics | 38 | Expired |
| US5170242A | Reaction barrier for a multilayer structure in an integrated circuit | Electricity | 32 | Expired |
| US5104822A | Method for creating self-aligned, non-patterned contact areas and stacked capacitors using the method | Emerging Cross-Sectional Technologies | 29 | Expired |
| US5024964A | Method of making ferroelectric memory devices | Electricity | 27 | Expired |
| US5109357A | DRAM memory cell and method of operation thereof for transferring increased amount of charge to a bit line | Electricity | 26 | Expired |
| US5162890A | Stacked capacitor with sidewall insulation | Emerging Cross-Sectional Technologies | 25 | Expired |
| US5214300A | Monolithic semiconductor integrated circuit ferroelectric memory device | Electricity | 21 | Expired |
| US4713157A | Combined integrated circuit/ferroelectric memory device, and ion beam methods of constructing same | Electricity | 17 | Expired |
| US5117177A | Reference generator for an integrated circuit | Physics | 16 | Expired |
| US5216281A | Self sealed aligned contact incorporating a dopant source | Electricity | 11 | Expired |
| US5134310A | Current supply circuit for driving high capacitance load in an integrated circuit | Physics | 11 | Expired |
| US5075817A | Trench capacitor for large scale integrated memory | Emerging Cross-Sectional Technologies | 7 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.