Patent · US Expired

High contrast low metal ion positive photoresist developing method using aqueous base solutions with surfactants

US4710449A · kind A · utility

8Cited by
8References
30Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 29, 1986
Grant dateDec 1, 1987
Priority date
Expiry dateJan 29, 2006

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/322
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A novel low metal ion developer composition used in a two step process which provided high contrast images and long developer bath life is provided. The process gives high contrast images. The substrate coated with positive photoresist is exposed then immersed in a "predip" bath, rinsed, and then, immersed in the developer bath, rinsed and dried. This process provided high contrast which does not decrease over the life of the developer system. The system consists of (1) a predip solution containing aqueous non-metal ion organic base and a cationic surfactant adjusted to a concentration that does not give development, and (2) a developer solution containing an aqueous solution of an non-metal ion organic base and a fluorochemical surfactant adjusted to a concentration that provides development. The high contrast is achieved by the cationic surfactant coating the resist and inhibiting the attack on the unexposed resist by the developer while permitting the developer to dissolve away the exposed resist.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.