Silicon oxide thin film etching process
US4711698A · kind A · utility
75Cited by
4References
25Claims
0Family size
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Inventor
Key dates
| Filing date | Jul 15, 1985 |
| Grant date | Dec 8, 1987 |
| Priority date | — |
| Expiry date | Jul 15, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C15/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A plasma dry etch process for etching semiconductor insulating materials, such as thermally grown or CVD deposited silicon oxide, with selectivity to silicon and refractory metals and their silicides, using a fluorinated inorganic center together with a hydrogen-liberating source under glow discharge conditions. The process does not employ saturated or unsaturated fluorocarbons as etchants, thereby eliminating the polymerization problem.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.