Combined integrated circuit/ferroelectric memory device, and ion beam methods of constructing same
US4713157A · kind A · utility
17Cited by
9References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 1985 |
| Grant date | Dec 15, 1987 |
| Priority date | — |
| Expiry date | May 14, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for forming targets of ferroelectric, metal nitrate or similar material, methods for depositing such materials using ion beam techniques, and a method for forming a combined and integrated circuit/ferroelectric memory device wherein the ferroelectric material is deposited using ion beam techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.