Current mirror sense amplifier for a non-volatile memory
US4713797A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1985 |
| Grant date | Dec 15, 1987 |
| Priority date | — |
| Expiry date | Nov 25, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory has memory cells which have a first or a second conductivity. A reference current is established through an unprogrammed reference cell which has the first conductivity. A logic state current is established through a selected memory cell. The magnitude of the logic state current is related to the conductivity of the selected memory cell. A current comparator is used to compare the reference current to the logic state current. If the logic state current is related to the first conductivity state, an output signal is provided at a first logic state. If the logic state current is related to the second conductivity state, the output signal is provided at a second logic state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.