Bruce L. Morton
40Patents
18h-index
37Co-inventors
81Inventor score
Filing activity: Jun 30, 1982 → Aug 10, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7042765B2 | Memory bit line segment isolation | Physics | 108 | Expired |
| US5474947A | Nonvolatile memory process | Electricity | 54 | Expired |
| US4713797A | Current mirror sense amplifier for a non-volatile memory | Physics | 45 | Expired |
| US5949706A | Static random access memory cell having a thin film transistor (TFT) pass gate connection to a bit line | Emerging Cross-Sectional Technologies | 43 | Expired |
| US5202855A | DRAM with a controlled boosted voltage level shifting driver | Physics | 42 | Expired |
| US4710902A | Technique restore for a dynamic random access memory | Physics | 36 | Expired |
| US4943948A | Program check for a non-volatile memory | Physics | 35 | Expired |
| US6791883B2 | Program and erase in a thin film storage non-volatile memory | Physics | 34 | Expired |
| US5381051A | High voltage charge pump | Electricity | 33 | Expired |
| US5721704A | Control gate driver circuit for a non-volatile memory and memory using same | Physics | 31 | Expired |
| US4727519A | Memory device including a clock generator with process tracking | Physics | 30 | Expired |
| US4791615A | Memory with redundancy and predecoded signals | Physics | 30 | Expired |
| US5159572A | DRAM architecture having distributed address decoding and timing control | Physics | 29 | Expired |
| US5365121A | Charge pump with controlled ramp rate | Electricity | 25 | Expired |
| US5729493A | Memory suitable for operation at low power supply voltages and sense amplifier therefor | Physics | 21 | Expired |
| US5706228A | Method for operating a memory array | Physics | 21 | Expired |
| US6128224A | Method and apparatus for writing an erasable non-volatile memory | Physics | 21 | Expired |
| US5754482A | Memory using undecoded precharge for high speed data sensing | Physics | 19 | Expired |
| US5898619A | Memory cell having a plural transistor transmission gate and method of formation | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5740109A | Non-linear charge pump | Physics | 18 | Expired |
| US9520173B1 | Magnetic random access memory (MRAM) and method of operation | Physics | 15 | Active |
| US6075727A | Method and apparatus for writing an erasable non-volatile memory | Physics | 13 | Expired |
| US4455493A | Substrate bias pump | Physics | 12 | Expired |
| US5422846A | Nonvolatile memory having overerase protection | Physics | 10 | Expired |
| US8189410B1 | Memory device and method thereof | Physics | 7 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.