Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge
US4715937A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 1986 |
| Grant date | Dec 29, 1987 |
| Priority date | — |
| Expiry date | May 5, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C8/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process utilizing a microwave discharge technique for performing direct nitridation of silicon at a relatively low growth temperature of no more than about 500.degree. C. in a nitrogen plasma ambient without the presence of hydrogen or a fluorine-containing species. Nitrogen is introduced through a quartz tube. A silicon rod connected to a voltage source is placed in the quartz tube and functions as an anodization electrode. The silicon wafer to be treated is connected to a second voltage source and functions as the second electrode of the anodizing circuit. A small DC voltage is applied to the silicon wafer to make the plasma current at the wafer and the silicon rod equal and minimize contamination of the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.