Mehrdad M. Moslehi
237Patents
54h-index
91Co-inventors
93Inventor score
Filing activity: May 5, 1986 → Jan 9, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5453124A | Programmable multizone gas injector for single-wafer semiconductor processing equipment | Chemistry; Metallurgy | 717 | Expired |
| US6692575B1 | Apparatus for supporting a substrate in a reaction chamber | Emerging Cross-Sectional Technologies | 522 | Expired |
| US5273609A | Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment | Emerging Cross-Sectional Technologies | 468 | Expired |
| US5082517A | Plasma density controller for semiconductor device processing equipment | Emerging Cross-Sectional Technologies | 461 | Expired |
| US5252178A | Multi-zone plasma processing method and apparatus | Emerging Cross-Sectional Technologies | 455 | Expired |
| US5305417A | Apparatus and method for determining wafer temperature using pyrometry | Electricity | 451 | Expired |
| US4956538A | Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors | Physics | 449 | Expired |
| US5937142A | Multi-zone illuminator for rapid thermal processing | Electricity | 400 | Expired |
| US5268989A | Multi zone illuminator with embeded process control sensors and light interference elimination circuit | Electricity | 367 | Expired |
| US5089441A | Low-temperature in-situ dry cleaning process for semiconductor wafers | Emerging Cross-Sectional Technologies | 362 | Expired |
| US5403434A | Low-temperature in-situ dry cleaning process for semiconductor wafer | Emerging Cross-Sectional Technologies | 358 | Expired |
| US4913929A | Thermal/microwave remote plasma multiprocessing reactor and method of use | Electricity | 334 | Expired |
| US5464499A | Multi-electrode plasma processing apparatus | Emerging Cross-Sectional Technologies | 254 | Expired |
| US4715937A | Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge | Chemistry; Metallurgy | 242 | Expired |
| US6016000A | Ultra high-speed chip semiconductor integrated circuit interconnect structure and fabrication method using free-space dielectrics | Electricity | 178 | Expired |
| US4996077A | Distributed ECR remote plasma processing and apparatus | Electricity | 177 | Expired |
| US5168072A | Method of fabricating an high-performance insulated-gate field-effect transistor | Electricity | 167 | Expired |
| US6136165A | Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition | Electricity | 153 | Expired |
| US5719495A | Apparatus for semiconductor device fabrication diagnosis and prognosis | Electricity | 128 | Expired |
| US5635409A | Real-time multi-zone semiconductor wafer temperature and process uniformity control system | Electricity | 125 | Expired |
| US5270222A | Method and apparatus for semiconductor device fabrication diagnosis and prognosis | Electricity | 121 | Expired |
| US5293216A | Sensor for semiconductor device manufacturing process control | Electricity | 113 | Expired |
| US5156461A | Multi-point pyrometry with real-time surface emissivity compensation | Physics | 109 | Expired |
| US6124198A | Ultra high-speed chip interconnect using free-space dielectrics | Electricity | 106 | Expired |
| US5446825A | High performance multi-zone illuminator module for semiconductor wafer processing | Chemistry; Metallurgy | 103 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.