Metal redistribution by rapid thermal processing
US4717588A · kind A · utility
6Cited by
10References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1985 |
| Grant date | Jan 5, 1988 |
| Priority date | — |
| Expiry date | Dec 23, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/917
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for diffusing a metal dopant into a semiconductor switching device is provided by the use of a rapid thermal heating apparatus. This method provides a procedure for the selectively placing of a metal dopant in a region of the device or circuit. This aids in increasing the manufacturing yields of the switching device, and increases the number of active traps for minority carriers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.