Semiconductor integrated circuit device
US4717684A · kind A · utility
33Cited by
15References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1986 |
| Grant date | Jan 5, 1988 |
| Priority date | — |
| Expiry date | Feb 3, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
Abstract
A semiconductor integrated circuit device wherein the source and drain regions of a MOSFET in an internal circuit have lightly doped drain (LDD) structures in order to suppress the appearance of hot carriers, and the source and drain regions of a MOSFET in an input/output circuit have structures doped with phosphorus at a high impurity concentration, in order to enhance an electrostatic breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.