Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers
US4719501A · kind A · utility
23Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 26, 1985 |
| Grant date | Jan 12, 1988 |
| Priority date | — |
| Expiry date | Dec 26, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 .ANG. and/or a particular range of etching rate when etched with a predetermined etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.