Isolation and substrate connection for a bipolar integrated circuit
US4721682A · kind A · utility
6Cited by
15References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1985 |
| Grant date | Jan 26, 1988 |
| Priority date | — |
| Expiry date | Sep 25, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure for isolating a bipolar transistor (100) from an adjacent transistor includes a first silicon dioxide isolation region (110) laterally surrounding the transistor and a conductive channel stop region (112) laterally surrounding the silicon dioxide isolation region. The channel stop region allows electrical potential of the substrate (102) to be controlled and the silicon dioxide isolation region prevents the channel stop from contacting the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.