Method of making a high density IC module assembly
US4722914A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1986 |
| Grant date | Feb 2, 1988 |
| Priority date | — |
| Expiry date | Aug 13, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/53178
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic module having a high density of silicon IC chips is provided by mounting the chips in tapered through-holes in a silicon substrate, filling the edge gaps between the chips and the substrate with a glass so that the chips, the filler glass, and the substrate have a smooth upper surface adapted to receive monolithic interconnections formed by planar metalization methods. The resulting assembly is enclosed in a housing also formed substantially from silicon, which contains electrically isolated pins for contacting the input-output electrodes of the assembly. Preferential etching is used to form the through-holes in the substrate as well as various alignment means on the substrate and other parts of the housing so that they are self-aligning during assembly. Improved performance, reliability, and low cost is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.