Silicon oxynitride storage node dielectric
US4725560A · kind A · utility
25Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1986 |
| Grant date | Feb 16, 1988 |
| Priority date | — |
| Expiry date | Sep 8, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/114
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An annealing process carried out at 800.degree. C. in a wet O.sub.2 ambient permits the manufacture of a reliable storage capacitor wherein the dielectric layer is comprised of silicon oxynitride formed by low pressure chemical vapor deposition (LPCVD). The manufacturing process includes first depositing the silicon oxynitride film by LPCVD, second annealing in wet O.sub.2 at 800.degree. C. or N.sub.2 at 1000.degree. C., third forming an N-type region in the silicon substrate by As.sup.+ ion implantation through the silicon oxynitride film, fourth annealing in wet O.sub.2 at 800.degree. C., and fifth depositing an electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.