John R. Abernathey
8Patents
8h-index
19Co-inventors
62Inventor score
Filing activity: Jun 28, 1984 → Aug 26, 1996
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5219788A | Bilayer metallization cap for photolithography | Emerging Cross-Sectional Technologies | 286 | Expired |
| US4601779A | Method of producing a thin silicon-on-insulator layer | Electricity | 92 | Expired |
| US4755478A | Method of forming metal-strapped polysilicon gate electrode for FET device | Electricity | 79 | Expired |
| US4649627A | Method of fabricating silicon-on-insulator transistors with a shared element | Emerging Cross-Sectional Technologies | 49 | Expired |
| US4725560A | Silicon oxynitride storage node dielectric | Emerging Cross-Sectional Technologies | 25 | Expired |
| US5453400A | Method and structure for interconnecting different polysilicon zones on semiconductor substrates for integrated circuits | Electricity | 15 | Expired |
| US5672901A | Structure for interconnecting different polysilicon zones on semiconductor substrates for integrated circuits | Electricity | 9 | Expired |
| US4556585A | Vertically isolated complementary transistors | Emerging Cross-Sectional Technologies | 9 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.