Silicon germanium photodetector

US4725870A · kind A · utility

Assignee

• American Telephone and Telegraph Company, AT&T Bell Laboratories · US

Inventors

• John C. Bean · New Providence, US
• Sergey Luryi · Bound Brook, US
• Thomas P. Pearsall · Paris, FR

Key dates

• Filing date: Nov 18, 1985
• Grant date: Feb 16, 1988
• Expiry date: Nov 18, 2005

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/1465
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A photodetector, comprising a Ge.sub.x Si.sub.1-x superlattice region between two silicon cladding layers in which the Ge.sub.x Si.sub.1-x layers absorb light, is described.