Method of forming twin doped regions of the same depth by high energy implant
US4729964A · kind A · utility
33Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1986 |
| Grant date | Mar 8, 1988 |
| Priority date | — |
| Expiry date | Apr 15, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/859
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
First conductivity type impurity ions are implanted at a predetermined depth all over a region where impurity ions are to be implanted, and second conductivity type impurity ions are implanted in a dose about twice as large as that of the first conductivity type impurity ions at substantially the same implantation depth of the first conductivity type impurity ions, followed by annealing. In this way, mutually contiguous first and second conductivity type regions having substantially the same impurity concentrations and located at substantially the same depths are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.