Magnetoresistive memory including thin film storage cells having tapered ends
US4731757A · kind A · utility
80Cited by
13References
14Claims
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Key dates
| Filing date | Jun 27, 1986 |
| Grant date | Mar 15, 1988 |
| Priority date | — |
| Expiry date | Jun 27, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A digital memory based on a memory cell having two magnetoresistive ferromagnetic film portions separated by an intermediate layer all of which are gradually narrowed at the ends thereof. Adjacent memory cells are preferrably arranged in a line with conductive junctions therebetween. The magnetic state of each cell can be sensed or set by providing currents of different magnitudes in conductive word lines which overlie the cells. The narrowed ends of the cells reduce demagnetizing effects which occur if the cell ends are abruptly terminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.