Semiconductor laser device with decreased light intensity noise
US4731792A · kind A · utility
14Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1986 |
| Grant date | Mar 15, 1988 |
| Priority date | — |
| Expiry date | Dec 30, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2235
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a TRS (twin ridge substrate) type semiconductor laser, reflectivity at both facets of the resonator at the oscillation wavelength is selected to be higher than the reflectivity of the semiconductor crystal of the laser device, but smaller than 1, thereby stabilizing the light oscillation with a low S/N ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.