Masahiro Kume
46Patents
14h-index
71Co-inventors
84Inventor score
Filing activity: Jul 3, 1974 → Jan 6, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6720586B1 | Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same | Electricity | 46 | Expired |
| US6030849A | Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate | Electricity | 43 | Expired |
| US6165812A | Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor | Electricity | 38 | Expired |
| US5923690A | Semiconductor laser device | Electricity | 38 | Expired |
| US4847557A | Hermetically sealed magnetic sensor | Emerging Cross-Sectional Technologies | 34 | Expired |
| US5386429A | Low operating current and low noise semiconductor laser device for optical disk memories | Electricity | 33 | Expired |
| US5990572A | Electric circuit breaker for vehicle | Electricity | 33 | Expired |
| US6392979B1 | Optical pickup and optical disk apparatus using the same | Electricity | 31 | Expired |
| US5923950A | Method of manufacturing a semiconductor light-emitting device | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6295930A | Circuit breaker | Electricity | 24 | Expired |
| US4050930A | Electrical contact material | Electricity | 18 | Expired |
| US6466597B1 | Semiconductor laser device | Electricity | 18 | Expired |
| US4804911A | Electromagnetic power generating type rotation sensor | Physics | 16 | Expired |
| US4731792A | Semiconductor laser device with decreased light intensity noise | Electricity | 14 | Expired |
| US5617435A | Lasing system with wavelength-conversion waveguide | Electricity | 14 | Expired |
| US5646953A | Semiconductor laser device | Electricity | 13 | Expired |
| US4072515A | Electrical contact material | Electricity | 13 | Expired |
| US6911351B2 | Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same | Electricity | 12 | Expired |
| US5751756A | Semiconductor laser device for use as a light source of an optical disk or the like | Electricity | 12 | Expired |
| US5574365A | Travel sensor having a magnetic sensor attached to a truncated pyramid and a movable magnet | Physics | 10 | Expired |
| US6324200A | Semiconductor laser device | Electricity | 9 | Expired |
| US6518082B1 | Method for fabricating nitride semiconductor device | Electricity | 9 | Expired |
| US5587334A | Semiconductor laser device fabrication method | Electricity | 8 | Expired |
| US6072762A | Optical disk recording/reproducing method and apparatus for preventing wave length shift during recording and reproducing operations | Physics | 8 | Expired |
| US6798811B1 | Semiconductor laser device, method for fabricating the same, and optical disk apparatus | Electricity | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.