Semiconductor memory device with high voltage switch
US4733371A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1986 |
| Grant date | Mar 22, 1988 |
| Priority date | — |
| Expiry date | Aug 26, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device according to the present invention includes a first high-voltage switch (20) formed by a first transistor (21), a second transistor (22), a first capacitor (23) and a third transistor (24) and a second high-voltage switch (30) formed by a fourth transistor (31), a fifth transistor (32), a second capacitor (33) and a sixth transistor (34). In a write cycle, input data are stored in capacitors (25, 35). In an erase cycle, the second high-voltage switch (30) is driven by a clock signal (.phi..sub.2) to make the control gate line (4) rise at a high voltage. In a program cycle, the first high-voltage switch (20) is driven by a clock signal (.phi..sub.1) to make the bit line of the bit to be written with data "0" rise at a high voltge, and upon completion of the program cycle, charges stored in the capacitor (25) are discharged to reset a column latch. Thus, the device requires no inverter and may be provided with only one high voltage source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.