Takeshi Nakayama
141Patents
28h-index
159Co-inventors
93Inventor score
Filing activity: Aug 31, 1976 → Jun 14, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4811294A | Data integrity verifying circuit for electrically erasable and programmable read only memory (EEPROM) | Physics | 156 | Expired |
| US5297096A | Nonvolatile semiconductor memory device and data erasing method thereof | Physics | 105 | Expired |
| US4970727A | Semiconductor integrated circuit having multiple self-test functions and operating method therefor | Physics | 81 | Expired |
| US5745417A | Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor | Electricity | 81 | Expired |
| US5233610A | Semiconductor memory device having error correcting function | Physics | 80 | Expired |
| US5428568A | Electrically erasable and programmable non-volatile memory device and a method of operating the same | Physics | 78 | Expired |
| US4903236A | Nonvolatile semiconductor memory device and a writing method therefor | Physics | 75 | Expired |
| US5111427A | Nonvolatile content-addressable memory and operating method therefor | Physics | 72 | Expired |
| US5363330A | Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming | Physics | 70 | Expired |
| US4953129A | Nonvolatile semiconductor memory device capable of reliably writing data and a data writing method therefor | Physics | 70 | Expired |
| US5347490A | Nonvolatile semiconductor memory device | Physics | 58 | Expired |
| US5371705A | Internal voltage generator for a non-volatile semiconductor memory device | Physics | 54 | Expired |
| US5283758A | Non-volatile semiconductor memory device | Physics | 53 | Expired |
| US5132928A | Divided word line type non-volatile semiconductor memory device | Physics | 51 | Expired |
| US4958317A | Nonvolatile semiconductor memory device and a writing method using electron tunneling | Physics | 49 | Expired |
| US7748110B2 | Method for producing connection member | Emerging Cross-Sectional Technologies | 47 | Active |
| US4531119A | Method and apparatus for key-inputting Kanji | Physics | 44 | Expired |
| US4805151A | Nonvolatile semiconductor memory device | Physics | 42 | Expired |
| US5659505A | Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor | Electricity | 39 | Expired |
| US5898606A | Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor | Electricity | 37 | Expired |
| US4733371A | Semiconductor memory device with high voltage switch | Physics | 36 | Expired |
| US4933906A | Non-volatile semiconductor memory device | Physics | 36 | Expired |
| US6691296B1 | Circuit board design aiding | Electricity | 33 | Expired |
| US4543631A | Japanese text inputting system having interactive mnemonic mode and display choice mode | Physics | 33 | Expired |
| US7258549B2 | Connection member and mount assembly and production method of the same | Emerging Cross-Sectional Technologies | 31 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.