Fabricating semiconductor devices to prevent alloy spiking
US4734383A · kind A · utility
20Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1985 |
| Grant date | Mar 29, 1988 |
| Priority date | — |
| Expiry date | Nov 22, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/859
Abstract
After contact holes for the P- and N-type source or drain regions of P- and N-channel MOSFETs have been made at a common step, an N-type impurity is ion-implanted into at least the N-type source or drain regions through the contact holes. The N-type impurity is annealed to form an N-type region which is deeper than the N-type source or drain regions. During the annealing treatment, the N-type source or drain regions are covered with an insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.