In-situ doping of MBE grown II-VI compounds on a homo- or hetero-substrate
US4735910A · kind A · utility
14Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1986 |
| Grant date | Apr 5, 1988 |
| Priority date | — |
| Expiry date | Sep 12, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of manufacturing semiconductors by as vacuum deposition process on various kinds of group II-VI compound semiconductors by irradiating onto the substrate an ion beam containing nitrogen or phosphorus or arsenic to obtain a p-type thin film crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.