Plasma deposited coatings, and low temperature plasma method of making same
US4737379A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1987 |
| Grant date | Apr 12, 1988 |
| Priority date | — |
| Expiry date | Mar 31, 2007 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB32B2375/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a substantially hydrogen free or controlled hydrogen content multi-element alloy film on a substrate. The method utilizes a microwave excited plasma of a hydrogen free precursor gas to deposit a hard, adherent coating. The method comprises providing a substrate to be coated in a vacuum deposition chamber, with a source of microwave energy coupled to the vacuum deposition chamber. A substantially hydrogen free reaction gas precursor composition is introduced into the reaction chamber at a pressure corresponding substantially to a pressure minimum of the modified Paschen curve for the reaction gas precursor composition. Activation of the source of microwave energy excites the reaction gas precursor composition, in this way forming a plasma in the vacuum deposition chamber to deposit a substantially hydrogen free or controlled hydrogen content multi-element alloy film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.