Method of making three dimensional structures of active and passive semiconductor components
US4737470A · kind A · utility
8Cited by
9References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 12, 1986 |
| Grant date | Apr 12, 1988 |
| Priority date | — |
| Expiry date | Sep 12, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/98
Abstract
The disclosure relates to a three dimensional semiconductor structure formed in a semiconductor substrate wherein electrical components, both active and passive, are formed on the substrate surface as well as in grooves formed in the substrate at an angle and extending to the surface. The substrate surface is designed to lie in a predetermined crystallographic plane of the substrate material and the grooves extend in a predetermined crystallographic direction from said plane, this being accomplished by orientation dependent etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.