Method of applying a resist
US4738910A · kind A · utility
10Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1986 |
| Grant date | Apr 19, 1988 |
| Priority date | — |
| Expiry date | Jun 10, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/136
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist process which comprises a process for spin-coating a substrate with a resist, a process for transferring a mask pattern onto the coated resist film followed by exposure, and a developing process for forming a pattern on the substrate after the pattern has been exposed. When the developed pattern of the resist pulsates with the increase or decrease of parameters in the process for applying resist, the value of the parameter is set to a value that corresponds to an extreme value of the pulsation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.