Piezoresistive strain sensing device
US4739381A · kind A · utility
16Cited by
9References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 1986 |
| Grant date | Apr 19, 1988 |
| Priority date | — |
| Expiry date | Mar 12, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/209
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A piezoresistive strain sensing device is comprised of a semiconductor single-crystal substrate, having crystal indices in the (100) phase, and having p-type and n-type diffused resistors formed therein. A diffused resistance gauge is formed of the p-type and n-type resistors. Temperature compensation means are formed adjacent the resistance gauge in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.