Amplifying gate thyristor having high gate sensitivity and high dv/dt rating
US4739387A · kind A · utility
3Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 1983 |
| Grant date | Apr 19, 1988 |
| Priority date | — |
| Expiry date | May 23, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
A thyristor is provided having high gate sensitivity in combination with high dv/dt ratings. An amplifying gate structure is utilized having a pilot thyristor region including a first portion characterized by a first extent and at least one projection of said first portion extending therefrom and having a lateral extent greater than the extent of said first portion; and means substantially isolating said pilot thyristor region from the remainder of the device which means surround said first portion and the sides of said projection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.