Semiconductor laser device
US4740976A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1984 |
| Grant date | Apr 26, 1988 |
| Priority date | — |
| Expiry date | Mar 23, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device comprises a semiconductor layer stack consisting of a first clad layer, an active layer, and a second clad layer which are successively stacked on a semiconductor substrate, and a light absorbing layer and a current blocking layer which are stacked on the second clad layer; the semiconductor assembly including a stripe shaped groove which extends from the surface of the semiconductor layer stack to the surface or interior of the second cladding layer, and another semiconductor layer having a forbidden band width greater than the active layer and the same conductivity type as the second clad layer which is embedded into the groove by chemical vapor deposition method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.