Anisotropic silicon etching in fluorinated plasma
US4741799A · kind A · utility
44Cited by
6References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 17, 1986 |
| Grant date | May 3, 1988 |
| Priority date | — |
| Expiry date | Nov 17, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of high rate anisotropic etching of silicon in a high pressure plasma is described. In one embodiment the etching ambient is a mixture of either NF.sub.3 or SF.sub.6, an inert gas such as nitrogen, and a polymerizing gas such as CHF.sub.3 that creates conditions necessary for anisotropy not normally possible with nonpolymerizing fluorinated gases in a high pressure regime. The etch process is characterized by high etch rates and good uniformity utilizing photoresist or similar materials as a mask. The present process may advantageously be used to etch deep trenches in silicon using a photoresist mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.