Method of fabricating a semiconductor device including selective etching of a silicide layer
US4742025A · kind A · utility
13Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1985 |
| Grant date | May 3, 1988 |
| Priority date | — |
| Expiry date | Nov 5, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/911
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A desired portion of a refractory metal silicide film is oxidized by anodic oxidation to form oxides of silicon and of metal. The oxides formed are completely removed by etching. By so doing, the desired portion of the silicide film can be etched selectively without badly damaging an underlying silicon substrate or silicon dioxide film. Therefore, it is possible to easily affect patterning of the silicide film used for electrodes of MOS transistors and bipolar transistors as well as resistors and interconnections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.