Semiconductor laser device with a diffraction grating
US4745615A · kind A · utility
8Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 1985 |
| Grant date | May 17, 1988 |
| Priority date | — |
| Expiry date | Oct 21, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3211
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device for laser oscillation at a wavelength in the range of from 660 nm to 890 nm which includes an active layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) or In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (0.51.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1, and z=2.04y-1.04) and a layer with a diffraction grating thereon of In.sub.1-y Ga.sub.y P.sub.1-z As (z=2.04y-1.04) which is adjacent to the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.