Vertical depletion-mode j-MOSFET
US4746960A · kind A · utility
67Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1987 |
| Grant date | May 24, 1988 |
| Priority date | — |
| Expiry date | Jul 27, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6728
Abstract
A vertical j-MOSFET useful as a power transistor includes a two-dimensional array of square cells in which a small fraction of the cells are replaced by a double-junction sink useful for collecting the minority carriers in the channel regions that normally will accumulate at each interface of the gate electrode and channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.