Field effect transistor
US4746961A · kind A · utility
12Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1987 |
| Grant date | May 24, 1988 |
| Priority date | — |
| Expiry date | Jun 8, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6721
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention relates to the structure of a field effect transistor, which is suitable for liquid crystal display of an active matrix scheme and there is disclosed a new structure for the field effect transistor, in which at least one of the source region and the drain region is of multi-layered structure, in which high impurity concentration portions and low impurity concentration portions are alternately superposed on each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.