Nobutake Konishi
59Patents
20h-index
53Co-inventors
91Inventor score
Filing activity: Dec 19, 1974 → Jul 1, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6266116A | In-plane field type liquid crystal display device comprising liquid crystal molecules with more than two kinds of reorientation directions | Physics | 256 | Expired |
| US5870160A | In-plane field type liquid crystal display device comprising a structure which is prevented from charging with electricity | Physics | 230 | Expired |
| US6034757A | In-plane field type liquid crystal display device comprising a structure which is prevented from charging electricity | Physics | 116 | Expired |
| US4943837A | Thin film semiconductor device and method of fabricating the same | Emerging Cross-Sectional Technologies | 107 | Expired |
| US5798744A | Liquid crystal display apparatus | Physics | 100 | Expired |
| US6108066A | In-plane field type liquid crystal display device comprising a structure which is prevented from charging with electricity | Physics | 98 | Expired |
| US4942441A | Thin film semiconductor device and method of manufacturing the same | Physics | 89 | Expired |
| US6266117A | Active-matrix liquid crystal display | Physics | 86 | Expired |
| US5784042A | Liquid crystal display device and method for driving the same | Physics | 72 | Expired |
| US5250937A | Half tone liquid crystal display circuit with an A.C. voltage divider for drivers | Physics | 67 | Expired |
| US5541748A | Liquid crystal display having patterned insulating and semiconductor layers and a method of fabricating the same | Physics | 67 | Expired |
| US5153702A | Thin film semiconductor device and method for fabricating the same | Physics | 55 | Expired |
| US4954855A | Thin film transistor formed on insulating substrate | Electricity | 44 | Expired |
| US5633738A | TFT substrate having scanning lines of metal films of columnar crystal grains | Emerging Cross-Sectional Technologies | 38 | Expired |
| US5008218A | Method for fabricating a thin film transistor using a silicide as an etch mask | Emerging Cross-Sectional Technologies | 31 | Expired |
| US4100562A | Light coupled semiconductor device and method of manufacturing the same | Electricity | 30 | Expired |
| US5283566A | Plane display | Physics | 29 | Expired |
| US6532053B2 | Transverse electric field system liquid crystal display device suitable for improving aperture ratio | Physics | 23 | Expired |
| US4466009A | Light-activated semiconductor device with optic fiber moveable azimuthally and transversely | Physics | 20 | Expired |
| US6462799B2 | Lateral electric-field liquid crystal display device suitable for improvement of aperture ratio | Physics | 20 | Expired |
| US5756372A | Method of making liquid crystal display | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6831724B2 | Lateral electric-field liquid crystal display device suitable for improvement of aperture ratio | Physics | 17 | Expired |
| US4016593A | Bidirectional photothyristor device | Electricity | 14 | Expired |
| US4016592A | Light-activated semiconductor-controlled rectifier | Electricity | 13 | Expired |
| US4746961A | Field effect transistor | Electricity | 12 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.