Differential arrangement magnetic memory cell
US4751677A · kind A · utility
53Cited by
13References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1986 |
| Grant date | Jun 14, 1988 |
| Priority date | — |
| Expiry date | Sep 16, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell having a plurality of storage structures in a differential arrangement. Two multilayered magnetoresistive memory cells are placed in a bridge arrangement with two impedance devices. The memory cells have one bridge juncture in common. Switches are connected to at least two of the four bridge junctures to permit the writing or reading of the magnetic state of the storage cells. The bridge arrangement combined with the appropriate switching action allows for a near doubling of the magnitude of the output sense signal while reducing the noise component of such signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.