Semiconductor laser device
US4751710A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1985 |
| Grant date | Jun 14, 1988 |
| Priority date | — |
| Expiry date | Jul 24, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32391
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A tunable semiconductor laser device includes a laser region and a tuning region, with a highly reflective surface formed on the cleaved vertical end facet of the tuning region for providing a reflectivity of 50% or more. The laser and tuning regions are formed on a common semiconductor substrate with the laser region having an active layer formed over the substrate, an optical waveguide layer adjacent the active layer and an electrode for carrying a drive current to the active region. The tuning region, adjacent the laser region on the substrate includes an optical waveguide which extends from the optical waveguide of the laser region, and a tuning current carrying electrode for injecting a tuning current across the waveguide layer of the tuning region. The tuning current alters the refractive index of the waveguide layer interface which changes the phase of the tuning region. Changing the tuning current varies the laser wavelength. The highly reflective end facet assures continuous wavelength tuning. The laser device may be incorporated into an integrated optical local oscillator comprising the laser device, a photodiode, a branched optical waveguide including an input port for m…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.