Distributed feedback semiconductor laser device
US4751719A · kind A · utility
14Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1986 |
| Grant date | Jun 14, 1988 |
| Priority date | — |
| Expiry date | Jun 10, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2277
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Laser chips which are stably operated in a single mode result from a semiconductor laser device in which a diffraction grating is formed neighboring an active layer. The distribution of current to be injected into the active layer is controlled to a configuration which substantially corresponds to that of the distribution of the field intensity of light along the laser optical axis inside the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.