Patent · US Expired

Semiconductor wafer heating chamber

US4755654A · kind A · utility

71Cited by
9References
21Claims
0Family size

Inventors

Key dates

Filing dateMar 26, 1987
Grant dateJul 5, 1988
Priority date
Expiry dateMar 26, 2007

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C16/04
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A semiconductor wafer heating chamber has an optical element between a light source and a wafer for redistributing the light from the light source. The optical element is constructed in such a manner as to produce the desired illumination (and thus heating) pattern on the semiconductor wafer from the light source. Preferably, the light source is a long-arc lamp mounted above a base plate of a heating chamber. A primary reflector is mounted above the long-arc lamp and is shaped to produce a substantially uniform light distribution on the base plate. A quartz window is mounted between the arc lamp and the base plate. The quartz window acts as a lens to redistribute the light from the lamp and the reflector on a wafer. The window can be constructed as a diffraction grating with a series of lines formed by etching into the window or depositing material on the window to produce a diffraction pattern which gives the desired illumination pattern on the wafer. Interchangeable quartz windows are used to produce different illumination patterns which are appropriate for different size wafers and different types of heating processes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.