Atomic layer etching
US4756794A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 31, 1987 |
| Grant date | Jul 12, 1988 |
| Priority date | — |
| Expiry date | Aug 31, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus, and method therefor, for removing a single atomic layer from he surface of a crystalline diamond. In a preferred embodiment, the apparatus comprises: a first delivery system for flooding the surface of the diamond with a pulse of nitrogen dioxide during a first phase of operation to cause a monolayer of nitrogen oxide to be adsorbed to the surface of the diamond; and a second delivery system for impacting the surface of the diamond with a pulse of ions of mixed noble and hydrogen gasses during a second phase of operation in order to remove a single atomic layer from the surface of the diamond. In a preferred method for removing a single atomic layer from the surface of a crystalline diamond, the method comprises the steps of: flooding the diamond surface with a pulse of nitrogen dioxide during the first phase of operation; and impacting the diamond surface with a pulse of ions of mixed noble and hydrogen gasses during a second phase of operation in order to remove a single atomic layer from the surface of the diamond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.