Deposition and planarizing methods and apparatus
US4756810A · kind A · utility
119Cited by
12References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1986 |
| Grant date | Jul 12, 1988 |
| Priority date | — |
| Expiry date | Dec 4, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3327
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A layer of a substance such as an aluminum alloy is deposited, preferably by sputtering, onto a surface of a substrate such as a semiconductor wafer. The deposited substance is redistributed by bombarding the layer with ions. The ion bombardment may be induced by applying low frequency RF excitation at about 5 KHz -1 MHz to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.