Contact etch method
US4758305A · kind A · utility
28Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 1986 |
| Grant date | Jul 19, 1988 |
| Priority date | — |
| Expiry date | Mar 11, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for patterning small-geometry contacts with sloped sidewalls in integrated circuit fabrication. A multilayer resist process is used, and the spacer layer is undercut by overexposure and overdevelopment at the pattern transfer stage. This provides a cantilever etch mask structure, without the need to use any hardmask layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.